Chemical stability and electrical performance of dual-active-layered zinc–tin–oxide/indium–gallium–zinc–oxide thin-film transistors using a solution process
We investigated the chemical stability and electrical properties of dual-active-layered zinc–
tin–oxide (ZTO)/indium–gallium–zinc–oxide (IGZO) structures (DALZI) with the durability of …
tin–oxide (ZTO)/indium–gallium–zinc–oxide (IGZO) structures (DALZI) with the durability of …
Reduction of bias and light instability of mixed oxide thin-film transistors
M Mativenga, JG Um, J Jang - Applied Sciences, 2017 - mdpi.com
Featured Application Active-matrix displays and sensors. Abstract Despite their potential use
as pixel-switching elements in displays, the bias and light instability of mixed oxide …
as pixel-switching elements in displays, the bias and light instability of mixed oxide …
Fast threshold voltage compensation AMOLED pixel circuit using secondary gate effect of dual gate a-IGZO TFTs
CH Jeon, JG Um, M Mativenga… - IEEE Electron Device …, 2016 - ieeexplore.ieee.org
We report a fast threshold voltage (VTH) compensation pixel circuit for active-matrix organic
light-emitting diode displays. The circuit utilizes the secondary gate effect in amorphous …
light-emitting diode displays. The circuit utilizes the secondary gate effect in amorphous …
Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process
CL Fan, MC Shang, BJ Li, YZ Lin, SJ Wang, WD Lee… - Materials, 2015 - mdpi.com
This study proposes a two-photomask process for fabricating amorphous indium–gallium–
zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The …
zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The …
The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors
We investigated the bias stress stability of solution-processed indium–gallium–zinc-oxide
thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so …
thin-film transistors (IGZO TFTs) using zinc–tin-oxide (ZTO) as the etch-stopper layer, the so …
Stability and spacial trap state distribution of solution processed ZnO-thin film transistors
M Ortel, S Pittner, V Wagner - Journal of Applied Physics, 2013 - pubs.aip.org
Solution processed zinc oxide thin film transistors (TFTs) were investigated for spacial
identification of instability inducing electronic trap states by utilizing surface-to-active …
identification of instability inducing electronic trap states by utilizing surface-to-active …
Synthesis and evaluation of κ 2-β-diketonate and β-ketoesterate tungsten (vi) oxo-alkoxide complexes as precursors for chemical vapor deposition of WO x thin films
RO Bonsu, DC Bock, H Kim, RY Korotkov… - Dalton …, 2016 - pubs.rsc.org
Reactions of [WO (OR) 4] x (x= 1, 2) complexes with bidentate ligands (LH= acacH, tbacH,
dpmH, tbpaH) afforded complexes 1–13:[WO (OCH3) 3 (acac)(1); WO (OCH2CH3) 3 …
dpmH, tbpaH) afforded complexes 1–13:[WO (OCH3) 3 (acac)(1); WO (OCH2CH3) 3 …
Correlation between CO2 Sensitivity and Channel-Layer Thickness in In2O3 Thin-Film Transistor Gas Sensors
A Nodera, R Kobayashi, T Kobayashi, S Aikawa - Electronics, 2024 - mdpi.com
CO2 monitoring is important for achieving net-zero emissions. Here, we report on a CO2 gas
sensor based on an In2O3 thin-film transistor (TFT), which is expected to realize both low …
sensor based on an In2O3 thin-film transistor (TFT), which is expected to realize both low …
The effect of the active layer thickness on the negative bias stress-induced instability in amorphous InGaZnO thin-film transistors
D Kong, HK Jung, Y Kim, M Bae… - IEEE electron device …, 2011 - ieeexplore.ieee.org
The effect of the active layer thickness (T IGZO) on the negative bias stress (NBS)-induced
threshold voltage shift (Δ VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is …
threshold voltage shift (Δ VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is …
Effect of active layer thickness variation on scaling response in a-IGZO thin film transistors under Schottky limited operation
RB Raj, AK Tripathi, PK Mahato, S Nair… - Semiconductor …, 2021 - iopscience.iop.org
Active layer thickness variation in highly-doped amorphous indium-gallium-zinc oxide thin
film transistors with molybdenum-chromium contacts is studied to reveal parametric …
film transistors with molybdenum-chromium contacts is studied to reveal parametric …