Bose–Einstein condensation and superfluidity of magnons in yttrium iron garnet films
C Sun, T Nattermann… - Journal of Physics D …, 2017 - iopscience.iop.org
A brief review of the theory of quasi-equilibrium Bose–Einstein condensation and
superfluidity of magnons in a film of yttrium iron garnet is presented. The Bose–Einstein …
superfluidity of magnons in a film of yttrium iron garnet is presented. The Bose–Einstein …
Area-efficient SOT-MRAM with a Schottky diode
This letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer
Magnetic configurations in synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer with strong
perpendicular anisotropy have been systematically studied. Magnetization versus field …
perpendicular anisotropy have been systematically studied. Magnetization versus field …
Unconventional superfluidity in yttrium iron garnet films
C Sun, T Nattermann, VL Pokrovsky - Physical review letters, 2016 - APS
We argue that the magnon condensate in yttrium iron garnet may display experimentally
observable superfluidity at room temperature despite the 100 times dominance of the normal …
observable superfluidity at room temperature despite the 100 times dominance of the normal …
Low power spintronic ternary content addressable memory
KP Gnawali, SN Mozaffari… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Ternary Content Addressable Memory (TCAM) is used in applications that require a low
power dissipation and fast data retrieval. This paper presents a domain wall-based …
power dissipation and fast data retrieval. This paper presents a domain wall-based …
Design and analysis of STTRAM-based ternary content addressable memory cell
R Govindaraj, S Ghosh - ACM Journal on Emerging Technologies in …, 2017 - dl.acm.org
Content Addressable Memory (CAM) is widely used in applications where searching a
specific pattern of data is a major operation. Conventional CAMs suffer from area, power …
specific pattern of data is a major operation. Conventional CAMs suffer from area, power …
Long-wave magnons in a ferromagnetic film
A new version of asymptotically exact theory of spectrum and transverse distribution of
magnetization in long-wave magnons is presented. It is based on exact analytical solution of …
magnetization in long-wave magnons is presented. It is based on exact analytical solution of …
Realization of Large Area Co20Fe60B20-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application
This study reports the current-induced switching of a Co20Fe60B20/MgO/Co20Fe60B20-
based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt] 4 stack as a synthetic …
based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt] 4 stack as a synthetic …
New Family of Six Stable Metals with a Nearly Isotropic Triangular Lattice of Organic Radical Cations and Diluted Paramagnetic System of Anions: κ(κ⊥)-(BDH-TTP)4MX4·Solv, where M = CoII, MnII; X = Cl, Br, and …
A new family of six paramagnetic metals, namely, κ-(BDH-TTP) 4CoCl4·(H2O) 5 (I), κ-(BDH-
TTP) 4Co0. 54Mn0. 46Cl4·(H2O) 5 (II), κ-(BDH-TTP) 4MnCl4·(H2O) 5 (III), κ⊥-(BDH-TTP) …
TTP) 4Co0. 54Mn0. 46Cl4·(H2O) 5 (II), κ-(BDH-TTP) 4MnCl4·(H2O) 5 (III), κ⊥-(BDH-TTP) …
Ferromagnetic resonance of CoFeB/Ta/CoFeB spin valves versus CoFeB film
RB Morgunov, GL L'vova, AD Talantsev, Y Lu… - Thin Solid Films, 2017 - Elsevier
Abstract In MgO/CoFeB/MgO/Ta (single layer) and MgO/CoFeB/Ta/CoFeB/MgO/Ta spin
valve (bilayer), the orientation dependences of ferromagnetic resonance (FMR) have been …
valve (bilayer), the orientation dependences of ferromagnetic resonance (FMR) have been …