N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures
Impurity-based p-type doping in wide–band-gap semiconductors is inefficient at room
temperature for applications such as lasers because the positive-charge carriers (holes) …
temperature for applications such as lasers because the positive-charge carriers (holes) …
[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN |
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high
electron mobility transistors due to its large dielectric constant and polarization. The …
electron mobility transistors due to its large dielectric constant and polarization. The …
Polarization induced hole doping in graded AlxGa1− xN (x= 0.7∼ 1) layer grown by molecular beam epitaxy
Polarization induced hole doping on the order of∼ 10 18 cm− 3 is achieved in linearly
graded Al x Ga 1− x N (x= 0.7∼ 1) layer grown by molecular beam epitaxy. Graded Al x Ga …
graded Al x Ga 1− x N (x= 0.7∼ 1) layer grown by molecular beam epitaxy. Graded Al x Ga …
Calculated thermoelectric properties of InxGa1− xN, InxAl1− xN, and AlxGa1− xN
The thermoelectric properties of III-nitride materials are of interest due to their potential use
for high temperature power generation applications and the increasing commercial …
for high temperature power generation applications and the increasing commercial …
Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
A novel multidimensional Mg-doped superlattice (SL) is proposed to enhance vertical hole
conductivity in conventional Mg-doped AlGaN SL which generally suffers from large …
conductivity in conventional Mg-doped AlGaN SL which generally suffers from large …
Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN
Minority carrier properties in dopant-free p-type distributed polarization doped (DPD) AlGaN
layers were investigated on the basis of the forward-biased current density–voltage (J–V) …
layers were investigated on the basis of the forward-biased current density–voltage (J–V) …