Silicon optical modulators
Optical technology is poised to revolutionize short-reach interconnects. The leading
candidate technology is silicon photonics, and the workhorse of such an interconnect is the …
candidate technology is silicon photonics, and the workhorse of such an interconnect is the …
Nanoscale electro-optic modulators based on graphene-slot waveguides
Z Lu, W Zhao - JOSA B, 2012 - opg.optica.org
Research on graphene has revealed its remarkable electro-optic properties, which promise
to satisfy the needs of future electro-optic modulators. However, its ultrasmall thickness …
to satisfy the needs of future electro-optic modulators. However, its ultrasmall thickness …
Low loss silicon fibers for photonics applications
L Lagonigro, N Healy, JR Sparks, NF Baril… - Applied Physics …, 2010 - pubs.aip.org
Silicon fibers are fabricated using a high pressure chemical deposition technique to deposit
the semiconductor material inside a silica capillary. The silicon is deposited in an …
the semiconductor material inside a silica capillary. The silicon is deposited in an …
Use of amorphous silicon for active photonic devices
FG Della Corte, S Rao - IEEE Transactions on Electron Devices, 2013 - ieeexplore.ieee.org
Silicon photonics is a new emerging and disruptive technology aimed at using cost-effective
silicon-based materials for the generation, control, and detection of modulated light signals …
silicon-based materials for the generation, control, and detection of modulated light signals …
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon pin waveguiding device
Hydrogenated amorphous silicon (a-Si: H) has been already considered for the objective of
passive optical elements, like waveguides and ring resonators, within photonic integrated …
passive optical elements, like waveguides and ring resonators, within photonic integrated …
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si: H
A very simple and fast MachZehnder electro-optic modulator based on a pin configuration,
operating at λ= 1.55 μm, has been fabricated at 170° C using the low cost technology of …
operating at λ= 1.55 μm, has been fabricated at 170° C using the low cost technology of …
All-optical modulation in a CMOS-compatible amorphous silicon-based device
Active silicon photonic devices, which dynamically control the flow of light, have received
significant attention for their use in on-chip optical networks. High-speed active silicon …
significant attention for their use in on-chip optical networks. High-speed active silicon …
Low-loss amorphous silicon waveguides grown by PECVD on indium tin oxide
Low-loss hydrogenated amorphous silicon (α-Si: H) waveguides were realized by plasma
enhanced chemical vapour deposition (PECVD) on a transparent conductive oxide (TCO) …
enhanced chemical vapour deposition (PECVD) on a transparent conductive oxide (TCO) …
Electrooptical Modulating Device Based on a CMOS-Compatible ${\bm\alpha} $-Si: H/${\bm\alpha} $-SiCN Multistack Waveguide
In this paper, we report results on a field-effect-induced light modulation at λ= 1.55 μm in a
high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is …
high-index-contrast waveguide based on a multisilicon-on-insulator platform. The device is …
Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage–length product
Electrically induced phase modulation is characterized for the first time in a waveguide-
integrated Fabry–Perot resonating cavity based both on an index-and conductivity-high …
integrated Fabry–Perot resonating cavity based both on an index-and conductivity-high …