This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-
aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro-and …

Currently, 3D integration is considered to be the most promising development direction
forchip industry. It relies on the through-silicon via (TSV) structure to achieve mechanical …

With the continuous miniaturization of electronic devices and the upcoming new
technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation …

Micron-scale shaped 2D or 2.5 D structures made of silver or copper can be produced by
combining silicon photolithographic etching with metal casting by pressure infiltration. This …

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …

With the increasing demand for high-density integration, low power consumption and high
bandwidth, creating more sophisticated interconnection technologies is becoming …

In semiconductor device fabrication, the feature profiles of a high-aspect-ratio (HAR) Si
trench is needed to be controlled considering aspect-ratio-dependent etching (ARDE). This …

In this article, shielded and airgap-isolated through-silicon vias (TSVs) are fabricated and
measured up to 50 GHz. The unique TSV configuration is low-loss and electrically shielded …

Semiconductor manufacturing demands a fast delivery of multiple gases to the tool. Hence
this document provides formulas for the fluid-mechanical timescales of this delivery. This is …

Microprobe tips are commonly used to perform in-situ micromechanical tests within an
electron microscope. In service, such tips have a tendency to accumulate along their surface …