The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit
bricks in integrated circuits (ICs) have constantly changed during the past five decades. The …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

Epitaxial growth of III–V lasers on the (001) Si platform is emerging as the ultimate
integration strategy for low-cost, energy-efficient, and wafer-scale photonic integrated …

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic
integration of lattice-mismatched III-V devices on Si substrates. It has been successfully …

The III–V materials offer superior optoelectronic performance that makes them an attractive
choice for integration into cheap and ubiquitous Si-based technologies, contingent upon …