Multi-channel AlGaN/GaN in-plane-gate field-effect transistors
C Erine, J Ma, G Santoruvo… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In
the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) …
the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) …
Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications
Y Jia, Q Wang, C Chen, C Feng, W Li… - … status solidi (a), 2021 - Wiley Online Library
This article proposes a parallel dual‐metal‐gate structure (PDM) of AlGaN/GaN high‐
electron‐mobility transistors (HEMTs) for high‐linearity applications. Cancellation of the third …
electron‐mobility transistors (HEMTs) for high‐linearity applications. Cancellation of the third …
Lateral Gate 2-D Electron Gas Field-Effect Transistor
C Chaubet, A Raymond, B Chenaud… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We propose a new type of 2-D electron gas field-effect transistor (TEGFET) in which the top
gate is replaced by two lateral gates (LGs), separated on each side of the conducting …
gate is replaced by two lateral gates (LGs), separated on each side of the conducting …