Recent advances in imaging devices: image sensors and neuromorphic vision sensors

WQ Wu, CF Wang, ST Han, CF Pan - Rare Metals, 2024 - Springer
Remarkable developments in image recognition technology trigger demands for more
advanced imaging devices. In recent years, traditional image sensors, as the go-to imaging …

Control of positive and negative photo-and thermal-responses in a single PbI 2@ CH 3 NH 3 PbI 3 micro/nanowire-based device for real-time sensing, nonvolatile …

R Gou, S Zhou, C Shi, Q Sun, Z Huang, J Zhao… - Materials …, 2024 - pubs.rsc.org
CH3NH3PbI3 has shown great potential for photodetectors and photovoltaic devices due to
its excellent positive response to visible light. However, its real-time response characteristics …

Suppression of persistent effect and enhancement of photoconductivity in PbTe: CaF2 epitaxial films

WP do Prado, AK Okazaki, LMB Vargas… - Journal of …, 2024 - Elsevier
This work presents the investigation of photoconductivity effect on CaF 2 doped PbTe films,
revealing a strong effect of the doping in the electrical and photoconductivity properties. For …

Negative and persistent photoconductivity in Bi-doped Pb0. 5Sn0. 5Te epitaxial films

AS Pires, WP do Prado, BA Kawata, LMB Vargas… - Optical Materials, 2024 - Elsevier
This work presents the investigation of the photoconductivity effect in undoped and doped
Pb 0.5 Sn 0.5 Te epitaxial films, with bismuth (Bi) atoms, at temperatures of 80 and 300 K …

[PDF][PDF] PROPRIEDADES DOS FILMES EPITAXIAIS DO ISOLANTE TOPOLÓGICO CRISTALINO PBSNTE DOPADO COM BISMUTO E DO POÇO QUÂNTICO DE SNTE

BA Kawata - CEP, 2022 - mtc-m21d.sid.inpe.br
RESUMO O composto semicondutor Pb (1-x) Sn (x) Te se cristaliza na estrutura do sal de
rocha. Devido à simetria de sua estrutura, ele foi classificado como um isolante topológico …

[引用][C] Oscilações de Shubnikov-de Haas em nanoestruturas baseadas em semicondutores de gap estreito

IF COSTA - 2022 - Universidade Federal de Itajubá