A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
[HTML][HTML] Guest Editorial: The dawn of gallium oxide microelectronics
M Higashiwaki, GH Jessen - Applied Physics Letters, 2018 - pubs.aip.org
Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …
compared. The bandgap is large enough to allow for the conductivity of the material to be …
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
In this Letter, high-performance vertical NiO/β-Ga 2 O 3 p–n heterojunction diodes without
any electric field managements were reported. The devices show a low leakage current …
any electric field managements were reported. The devices show a low leakage current …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Perspective—opportunities and future directions for Ga2O3
The β-polytype of Ga 2 O 3 has a bandgap of∼ 4.8 eV, can be grown in bulk form from melt
sources, has a high breakdown field of∼ 8 MV. cm− 1 and is promising for power electronics …
sources, has a high breakdown field of∼ 8 MV. cm− 1 and is promising for power electronics …