A comprehensive review of ZnO materials and devices

Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005 - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

Group‐III sesquioxides: growth, physical properties and devices

H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth

H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO

P Sharma, A Gupta, KV Rao, FJ Owens, R Sharma… - Nature materials, 2003 - nature.com
The search for ferromagnetism above room temperature in dilute magnetic semiconductors
has been intense in recent years. We report the first observations of ferromagnetism above …

Synthesis, anion exchange, and delamination of Co− Al layered double hydroxide: assembly of the exfoliated nanosheet/polyanion composite films and magneto …

Z Liu, R Ma, M Osada, N Iyi, Y Ebina… - Journal of the …, 2006 - ACS Publications
This paper describes a systematic study on the synthesis, anion exchange, and
delamination of Co− Al layered double hydroxide (LDH), with the aim of achieving …

Zinc oxide nanostructures: synthesis and properties

Z Fan, JG Lu - Journal of nanoscience and nanotechnology, 2005 - ingentaconnect.com
This article provides a comprehensive review of the current research activities that focus on
the ZnO nanostructure materials and their physical property characterizations. It begins with …

High Temperature Ferromagnetism with a Giant Magnetic Moment <?format ?>in Transparent Co-doped

SB Ogale, RJ Choudhary, JP Buban, SE Lofland… - Physical Review Letters, 2003 - APS
The occurrence of room temperature ferromagnetism is demonstrated in pulsed laser
deposited thin films of S n 1-x C ox O 2-δ (x< 0.3). Interestingly, films of S n 0.95 C o 0.05 O 2 …

First principles materials design for semiconductor spintronics

K Sato, H Katayama-Yoshida - Semiconductor Science and …, 2002 - iopscience.iop.org
Materials design of new functional diluted magnetic semiconductors (DMSs) is presented
based on first principles calculations. The stability of the ferromagnetic state in ZnO-, ZnS …

Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

F Pan, C Song, XJ Liu, YC Yang, F Zeng - Materials Science and …, 2008 - Elsevier
This review article first presents a summary of current understanding of the magnetic
properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are …

Anisotropic ferromagnetism in substituted zinc oxide

M Venkatesan, CB Fitzgerald, JG Lunney, JMD Coey - Physical review letters, 2004 - APS
Room-temperature ferromagnetism is observed in (110) oriented ZnO films made from
targets containing 5 at.% of Sc, Ti, V, Fe, Co, or Ni, but not Cr, Mn, or Cu ions. There are …