[HTML][HTML] Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices
MB Johnston, HJ Joyce - Progress in Quantum Electronics, 2022 - Elsevier
Pronounced polarization anisotropy in semiconductor nanowires has been exploited to
achieve polarization-sensitive devices operating across the electromagnetic spectrum, from …
achieve polarization-sensitive devices operating across the electromagnetic spectrum, from …
Synthesis and Single Crystal X-ray Diffraction Structure of an Indium Arsenide Nanocluster
The discovery of magic-sized clusters as intermediates in the synthesis of colloidal quantum
dots has allowed for insight into formation pathways and provided atomically precise …
dots has allowed for insight into formation pathways and provided atomically precise …
Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy
Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …
Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires
The development of bulk synthetic processes to prepare functional nanomaterials is crucial
to achieve progress in fundamental and applied science. Transition-metal chalcogenide …
to achieve progress in fundamental and applied science. Transition-metal chalcogenide …
Raman scattering applied to materials science
A Cantarero - Procedia Materials Science, 2015 - Elsevier
One of the most powerful techniques to extract physical and chemical information of a
material is the light scattering. Opposite to x-ray scattering for instance, where an average of …
material is the light scattering. Opposite to x-ray scattering for instance, where an average of …
Optical absorption exhibits pseudo-direct band gap of wurtzite gallium phosphide
Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
S Morkötter, S Funk, M Liang, M Döblinger… - Physical Review B …, 2013 - APS
Accessing fundamental structure-property correlations in ternary semiconductor nanowires
is a challenging endeavor often limited by large compositional inhomogeneities. Here, we …
is a challenging endeavor often limited by large compositional inhomogeneities. Here, we …
Optical emission of InAs nanowires
M Möller, MM de Lima Jr, A Cantarero… - …, 2012 - iopscience.iop.org
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by
photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands …
photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands …
Non-Uniformly Strained Core–Shell InAs/InP Nanowires for Mid-Infrared Photonic Applications
V Fedorov, M Vinnichenko, R Ustimenko… - ACS Applied Nano …, 2023 - ACS Publications
Crystal phase and strain engineering in epitaxial nanowire (NW) heterostructures provide a
widely tunable functionality for future nanoscale light emitters and photodetectors. Thus …
widely tunable functionality for future nanoscale light emitters and photodetectors. Thus …
Hot Carrier Nanowire Transistors at the Ballistic Limit
We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron
devices reaching the ballistic limit at room temperature. The devices are realized with …
devices reaching the ballistic limit at room temperature. The devices are realized with …