[HTML][HTML] Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices

MB Johnston, HJ Joyce - Progress in Quantum Electronics, 2022 - Elsevier
Pronounced polarization anisotropy in semiconductor nanowires has been exploited to
achieve polarization-sensitive devices operating across the electromagnetic spectrum, from …

Synthesis and Single Crystal X-ray Diffraction Structure of an Indium Arsenide Nanocluster

SF Sandeno, SM Krajewski, RA Beck… - ACS Central …, 2024 - ACS Publications
The discovery of magic-sized clusters as intermediates in the synthesis of colloidal quantum
dots has allowed for insight into formation pathways and provided atomically precise …

Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman spectroscopy

C Fasolato, M De Luca, D Djomani, L Vincent… - Nano …, 2018 - ACS Publications
Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

HE Lim, Y Nakanishi, Z Liu, J Pu, M Maruyama… - Nano Letters, 2020 - ACS Publications
The development of bulk synthetic processes to prepare functional nanomaterials is crucial
to achieve progress in fundamental and applied science. Transition-metal chalcogenide …

Raman scattering applied to materials science

A Cantarero - Procedia Materials Science, 2015 - Elsevier
One of the most powerful techniques to extract physical and chemical information of a
material is the light scattering. Opposite to x-ray scattering for instance, where an average of …

Optical absorption exhibits pseudo-direct band gap of wurtzite gallium phosphide

BC da Silva, ODD Couto Jr, HT Obata, MM de Lima… - Scientific reports, 2020 - nature.com
Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …

Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap

S Morkötter, S Funk, M Liang, M Döblinger… - Physical Review B …, 2013 - APS
Accessing fundamental structure-property correlations in ternary semiconductor nanowires
is a challenging endeavor often limited by large compositional inhomogeneities. Here, we …

Optical emission of InAs nanowires

M Möller, MM de Lima Jr, A Cantarero… - …, 2012 - iopscience.iop.org
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by
photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands …

Non-Uniformly Strained Core–Shell InAs/InP Nanowires for Mid-Infrared Photonic Applications

V Fedorov, M Vinnichenko, R Ustimenko… - ACS Applied Nano …, 2023 - ACS Publications
Crystal phase and strain engineering in epitaxial nanowire (NW) heterostructures provide a
widely tunable functionality for future nanoscale light emitters and photodetectors. Thus …

Hot Carrier Nanowire Transistors at the Ballistic Limit

M Kumar, A Nowzari, AR Persson, S Jeppesen… - Nano Letters, 2024 - ACS Publications
We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron
devices reaching the ballistic limit at room temperature. The devices are realized with …