Intensive comparative study using X-Ray diffraction for investigating microstructural parameters and crystal defects of the novel nanostructural ZnGa2S4 thin films
This paper is devoted to synthesizing good quality polycrystalline ZnGa 2 S 4 thin films of
different thicknesses using inexpensive pyrolysis technology for the first time. Then study the …
different thicknesses using inexpensive pyrolysis technology for the first time. Then study the …
Fabrication and characterization of ZnGa1. 01Te2. 13/g-C3N4 heterojunction with enhanced photocatalytic activity
CC Chen, WJ Liu, J Shaya, YY Lin, FY Liu, CW Chen… - Heliyon, 2023 - cell.com
The extensive consumption of fossil fuels increases CO 2 concentration in the atmosphere,
resulting in serious global warming problems. Meanwhile, the problem of water …
resulting in serious global warming problems. Meanwhile, the problem of water …
Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode
The polycrystalline ZnGa2Se4 thin film was prepared by thermal evaporation technique on n-
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
Insights into the optoelectronic and thermoelectric properties of defect chalcopyrites XAl2Se4 (X= Zn, Cd, and Hg): A density functional theory approach
In the current study, we employed the full-potential linearized augmented plane wave plus
local orbitals (FP-LAPW+ lo) approach within the density functional theory (DFT) to …
local orbitals (FP-LAPW+ lo) approach within the density functional theory (DFT) to …
[HTML][HTML] Systemically study of optoelectronic and transport properties of chalcopyrite HgAl2X4 (X= S, Se) compounds for solar cell device applications
This article investigated the structure, optoelectronic characteristics, and transport properties
of the Hg-based chalcopyrite HgAl 2 X 4 (X= S, Se) using DFT. To calculate the optimized …
of the Hg-based chalcopyrite HgAl 2 X 4 (X= S, Se) using DFT. To calculate the optimized …
Structural and optical investigations of ZnGa2X4 (X= S, Se) compounds for solar photovoltaic applications
In this paper, we have performed electronic and optical investigations for ternary bulk
chalcopyrite's ZnGa 2 X 4 (X= S, Se) to explore their utility as solar cell materials. The …
chalcopyrite's ZnGa 2 X 4 (X= S, Se) to explore their utility as solar cell materials. The …
Structural characterization and novel optical properties of defect chalcopyrite ZnGa2Te4 thin films
Stoichiometric thin film samples of the ternary ZnGa2Te4 defect chalcopyrite compound
were prepared and characterized by X-ray diffraction technique. The elemental chemical …
were prepared and characterized by X-ray diffraction technique. The elemental chemical …
Structure, optical spectroscopy and dispersion parameters of ZnGa2Se4 thin films at different annealing temperatures
Thin films of ZnGa2Se4 were deposited by thermal evaporation method of pre-synthesized
ingot material onto highly cleaned microscopic glass substrates. The chemical composition …
ingot material onto highly cleaned microscopic glass substrates. The chemical composition …
Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode
X-ray diffraction pattern and AFM results confirm the nanostructure of p-ZnGa 2 Se 4/n-Si.
The unit cell lattice parameters, the crystallite size L, the dislocation density δ, and the main …
The unit cell lattice parameters, the crystallite size L, the dislocation density δ, and the main …
Impedance spectroscopy of p-ZnGa2Te4/n-Si nano-HJD
The dielectric relaxation and alternating current mechanisms of nano-crystalline p-
ZnGa2Te4/n-Si heterojunction diode (HJD) were investigated by complex impedance …
ZnGa2Te4/n-Si heterojunction diode (HJD) were investigated by complex impedance …