A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

The primary objective of the present paper is to analyze the influence of interface stress on
the elastic field within a nano-scale inclusion. Special attention is focused on the case of non …

We report on a combination of lithography and self-assembly techniques which results in
long-range two-dimensionally ordered Ge islands. Island lattices with perpendicular but also …

By means of kinetic Monte Carlo simulations of the self-organized growth of quantum dots in
strained semiconductor systems we resolve the seemingly contradictory features of kinetic …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

We identify the most important parameters for the growth of ordered SiGe islands on pit-
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …

The commonly accepted Stranski-Krastanow model, according to which island formation
occurs on top of a wetting layer (WL) of a certain thickness, predicts for the morphological …