[HTML][HTML] Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D
Abstract In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study
the absorber layer defect density and n/i interface of perovskite solar cells versus various …
the absorber layer defect density and n/i interface of perovskite solar cells versus various …
Enhancing the photovoltaic performance of Cd-free Cu2ZnSnS4 heterojunction solar cells using SnS HTL and TiO2 ETL
MA Rahman - Solar Energy, 2021 - Elsevier
Cu 2 ZnSnS 4 chalcogenide semiconductor is a very promising absorber material for solar
cells and no longer fulfilled its realistic goals due to the possible challenge of defect-free …
cells and no longer fulfilled its realistic goals due to the possible challenge of defect-free …
A review on single crystal and thin film Si–Ge alloy: growth and applications
R Basu - Materials Advances, 2022 - pubs.rsc.org
The IV–IV binary alloy, Si–Ge, has attracted incredible attention for its superior performances
in multiple disciplines, especially in high temperature thermoelectric and BICMOS …
in multiple disciplines, especially in high temperature thermoelectric and BICMOS …
Numerical analysis of FeSi2 based solar cell with PEDOT: PSS hole transport layer
Recently, most of the researchers are showing their interest on Iron di-silicide (FeSi 2) based
solar cell because, it is an excellent and promising light absorbing material for solar cell …
solar cell because, it is an excellent and promising light absorbing material for solar cell …
Elucidating the role of interfacial MoS2 layer in Cu2ZnSnS4 thin film solar cells by numerical analysis
In this study, the effects of transition metal dichalcogenide, MoS 2 interfacial layer formation
between the Cu 2 ZnSnS 4 (CZTS) absorber layer and Mo back contact in a conventional …
between the Cu 2 ZnSnS 4 (CZTS) absorber layer and Mo back contact in a conventional …
[HTML][HTML] Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films
In this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-
frequency magnetron sputtering at different growth (substrate) temperatures ranging from …
frequency magnetron sputtering at different growth (substrate) temperatures ranging from …
Effect of selective lateral chromium doping by RF magnetron sputtering on the structural, and opto-electrical properties of nickel oxide
Featured Application Cr-doped NiO can be used as photovoltaic material and other
optoelectronic applications as well. Abstract In this study, chromium (Cr)-doped nickel oxide …
optoelectronic applications as well. Abstract In this study, chromium (Cr)-doped nickel oxide …
Investigating the properties of nickel oxide thin films prepared via DC reactive magnetron sputtering for potential application in gas sensing
Nanocrystalline nickel oxide (NiO) thin films were developed on Si substrate using DC
reactive magnetron sputtering. The goal of our study was to investigate the impact of O 2/Ar …
reactive magnetron sputtering. The goal of our study was to investigate the impact of O 2/Ar …
Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin films
Abstract Si 1-x Ge x (0≤ x≤ 1) thin films were deposited by means of biased target ion
beam sputtering at a low substrate temperature near 100° C inside a vacuum chamber. The …
beam sputtering at a low substrate temperature near 100° C inside a vacuum chamber. The …
Ge-rich SiGe thin film deposition by co-sputtering in in-situ and ex-situ solid phase crystallization for photovoltaic applications
This study investigates the properties of high Ge content silicon-germanium thin films in the
non-hydrogenated state (Ge-rich SiGe) deposited on glass by RF magnetron co-sputtering …
non-hydrogenated state (Ge-rich SiGe) deposited on glass by RF magnetron co-sputtering …