Nonvolatile multistates memories for high-density data storage

Q Cao, W Lü, XR Wang, X Guan, L Wang… - … Applied Materials & …, 2020 - ACS Publications
In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

A large-scale empirical study on self-admitted technical debt

G Bavota, B Russo - Proceedings of the 13th international conference …, 2016 - dl.acm.org
Technical debt is a metaphor introduced by Cunningham to indicate" not quite right code
which we postpone making it right". Examples of technical debt are code smells and bug …

A survey of phase change memory systems

F Xia, DJ Jiang, J Xiong, NH Sun - Journal of Computer Science and …, 2015 - Springer
As the scaling of applications increases, the demand of main memory capacity increases in
order to serve large working set. It is difficult for DRAM (dynamic random access memory) …

Compex++ compression-expansion coding for energy, latency, and lifetime improvements in mlc/tlc nvms

PM Palangappa, K Mohanram - ACM Transactions on Architecture and …, 2017 - dl.acm.org
Multilevel/triple-level cell nonvolatile memories (MLC/TLC NVMs) such as phase-change
memory (PCM) and resistive RAM (RRAM) are the subject of active research and …

FPB: Fine-grained power budgeting to improve write throughput of multi-level cell phase change memory

L Jiang, Y Zhang, BR Childers… - 2012 45th Annual IEEE …, 2012 - ieeexplore.ieee.org
As a promising nonvolatile memory technology, Phase Change Memory (PCM) has many
advantages over traditional DRAM. Multi-level Cell PCM (MLC) has the benefit of increased …

Morlog: Morphable hardware logging for atomic persistence in non-volatile main memory

X Wei, D Feng, W Tong, J Liu… - 2020 ACM/IEEE 47th …, 2020 - ieeexplore.ieee.org
Byte-addressable non-volatile memory (NVM) is emerging as an alternative for main
memory. Non-volatile main memory (NVMM) systems are required to support atomic …

Bit mapping for balanced PCM cell programming

Y Du, M Zhou, BR Childers, D Mossé… - ACM SIGARCH …, 2013 - dl.acm.org
Write bandwidth is an inherent performance bottleneck for Phase Change Memory (PCM) for
two reasons. First, PCM cells have long programming time, and second, only a limited …

Low power multi-level-cell resistive memory design with incomplete data mapping

D Niu, Q Zou, C Xu, Y Xie - 2013 IEEE 31st International …, 2013 - ieeexplore.ieee.org
Phase change memory (PCM) has been widely studied as a potential DRAM alternative.
The multi-level cell (MLC) can further increase the memory density and reduce the …

ER: Elastic RESET for low power and long endurance MLC based phase change memory

L Jiang, Y Zhang, J Yang - Proceedings of the 2012 ACM/IEEE …, 2012 - dl.acm.org
Phase Change Memory (PCM) has recently emerged as a promising nonvolatile memory
technology. To effectively increase memory capacity and reduce per bit fabrication cost …

A low power and reliable charge pump design for phase change memories

L Jiang, B Zhao, J Yang, Y Zhang - ACM SIGARCH Computer …, 2014 - dl.acm.org
The emerging Phase Change Memory (PCM) technology exhibits excellent scalability and
density potentials. At the same time, they require high current and high voltages to switch …