The invention comprises a chemical vapor deposition method of forming a barium strontium
titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and …

The invention includes chemical vapor deposition and physical vapor deposition methods of
forming high k ABO 3 comprising dielectric layers on a substrate, where “A” is selected from …

(54) CHEMICAL VAPOR DEPOSITION 4,261,698 A 4/1981 Carr et al. METHODS OF
FORMING BARUM 4,691,662 A 9/1987 Roppel et al. STRONTUM TITANATE COMPRISING …

The invention includes a chemical vapor deposition method of forming a barium strontium
titanate comprising dielectric layer having a varied concentration of barium and strontium …

A method of forming a capacitor having a capacitor dielectric layer comprising ABO 3, where
“A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures …

A method of forming a capacitor having a capacitor dielectric layer comprising ABO 3, where
“A” is selected from the group consisting of Group IIA and Group IVB metal elements and …

Hybrid plasmas have been reported in various areas of research over the last 40 years.
However, a general overview of hybrid plasmas has never been presented or reported. In …

In a dual plasma device, the first plasma is a microwave discharge having its own means of
plasma initiation and control. The microwave discharge operates at electron cyclotron …

A plasma reactor for forming a dense plasma from a gas is described incorporating a
housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to …

US5304250A - Plasma system comprising hollow mesh plate electrode - Google Patents
US5304250A - Plasma system comprising hollow mesh plate electrode - Google Patents …