In this brief, a novel superjunction (SJ)-insulated-gate bipolar transistor (SJ-IGBT) is
proposed and investigated by simulation, where a floating N-base region on the P-pillar …

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …

Compared with the discrete insulated gate bipolar transistor (IGBT), the silicon-on-insulator
lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits …

In this paper, we investigate the performance of the three-phase ac-ac matrix converter (MC)
utilizing the novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor …

A novel superjunction (SJ) reverse-blocking (RB) insulated gate bipolar transistor (IGBT) is
proposed and investigated for the first time. The device features a shorted collector trench …

A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-
Junction device structures for high-voltage applications beyond 600 V is discussed on the …

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for
the first time. By adding one or several ODIs in the drift longitudinally equidistantly, the ODI …

介绍了现代硅基大功率半导体器件的历史演变和新型器件结构的研究进展,
以及宽禁带半导体材料和器件的现状; 阐述了国内大功率半导体器件在轨道交通 …

In this paper, a novel superjunction IGBT with a depletion trench (DT SJ IGBT) is proposed
and investigated by simulation. In the on-state, the depletion trench together with gate trench …

In this paper, a novel dual-trench superjunction insulated gate bipolar transistor with semi-
floating P-pillar (DTSFP-SJ-IGBT) is proposed and studied by simulation. The P-pillar of …