The authors present the application of contactless electroreflectance (CER) spectroscopy to
study optical transitions in low dimensional semiconductor structures including quantum …

Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are
determined by fitting the energy levels calculated by a single-band model to those obtained …

A strong topographical evidence of the 2D to 3D transition in InAs/GaAs nanostructures
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by
molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with …

We present optical studies of quantum dot tunnel injection structures for 1.3 μ m emission
with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by …

Photoreflectance and photoluminescence, supported by the energy level calculations in the
eight-band k⋅ p model including strain, have been used to study the optical properties of …

Here comes a report on the optical properties of InP based InAs columnar quantum dashes,
which are proposed as an alternative for columnar quantum dots in semiconductor optical …

This work examines the optical transitions of a GaAs double quantum ring (DQR) embedded
in Al0. 3Ga0. 7As matrix by photoreflectance spectroscopy (PR). The GaAs DQR was grown …

An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described
to investigate the capping process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to …

Gallium oxide and more particularly β-Ga 2 O 3 matrix is an excellent material for new
generation of devices electrically or optically driven as it is known as the widest band gap …