Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

We apply a selective etching procedure to probe the lateral composition profile of self-
assembled SiGe pyramids on a Si (001) substrate surface. We find that the pyramids consist …

We investigated the formation of Ge islands on Si (111) and Si (100) surfaces covered with
ultrathin SiO2 films as a function of the growth temperature, the Ge deposition rate, and the …

The influence of growth temperature in the regime of dome formation in Stranski–Krastanow
growth is studied systematically on a series of Ge on Si (001) samples. A combination of …

Three-dimensional Si islands with a number density from 10 12 to 10 13 cm− 2 and size of 3–
10 nm were grown on Si (001) substrates covered with 0.3-nm-thick SiO 2 layers. The …

Ge island formation on ultrathin SiO2 films enabled us to fabricate multilayer structures of Ge
dots 6–7 nm in diameter and with an extremely high dot density of 21012 cm 2. Each dot had …

X-ray absorption fine structure (XAFS) is a powerful tool in the study of the local atomic
environment in condensed matter. It has been often applied to the study of semiconductor …

Photocurrent spectroscopy was employed to study interband optical transitions and the
quantum-confined Stark effect in an array of Ge/Si self-assembled quantum dots. The mean …

The spontaneous formation of nanometric and highly dense (∼ 3× 10 12 cm− 2) Ge droplets
on thin Si O 2 film on Si (001) is investigated by scanning tunneling microscopy and …