A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …
has become imperative to have health safety systems in place to curb the ill‐effects on …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
Materials issues and devices of α-and β-Ga2O3
E Ahmadi, Y Oshima - Journal of Applied Physics, 2019 - pubs.aip.org
Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …
(depending on its crystal structure), which is much greater than those of conventional wide …
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
HW Xue, QM He, GZ Jian, SB Long, T Pang… - Nanoscale research …, 2018 - Springer
Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …
Lateral β-Ga2O3 field effect transistors
Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …