Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology

E Mani, E Abbasian, M Gunasegeran… - … -International Journal of …, 2022 - Elsevier
Many researchers are trying to create a low power, high stability, and high-speed static
random access memory (SRAM) cell. This paper introduces an SRAM cell consisting of 12 …

Characterization of half-select free write assist 9T SRAM cell

S Pal, S Bose, WH Ki, A Islam - IEEE transactions on electron …, 2019 - ieeexplore.ieee.org
Modern biomedical applications have created a high demand for low power static random
access memory (SRAM). In this article, a reliable low power half-select free-write assist 9T …

Robust TFET SRAM cell for ultra-low power IoT applications

S Ahmad, N Alam, M Hasan - AEU-International Journal of Electronics and …, 2018 - Elsevier
Abstract Design of ultra-low power SRAM with robust operation for Internet of Thing (IoT)
sensor node is a new challenge. In this work, a novel 9T TFET based SRAM bit cell is …

Pseudo differential multi-cell upset immune robust SRAM cell for ultra-low power applications

S Ahmad, N Alam, M Hasan - AEU-International Journal of Electronics and …, 2018 - Elsevier
This paper presents a pseudo differential 12 transistor (PD12T) ultra-low leakage, fully half-
select-free robust SRAM cell with good static and dynamic read/write performance. The …

Design of a highly stable and robust 10T SRAM cell for low-power portable applications

E Abbasian, M Gholipour - Circuits, Systems, and Signal Processing, 2022 - Springer
This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …

A 220 mV robust read-decoupled partial feedback cutting based low-leakage 9T SRAM for Internet of Things (IoT) applications

V Sharma, M Gopal, P Singh… - AEU-International Journal …, 2018 - Elsevier
In this work, a 9T subthreshold SRAM cell is proposed with the reduced leakage power and
improved stability against the PVT variations. The proposed cell employs the read …

A high stable 8T-SRAM with bit interleaving capability for minimization of soft error rate

D Nayak, DP Acharya, PK Rout, U Nanda - Microelectronics Journal, 2018 - Elsevier
The impact of alpha particle and exposure to cosmic radiation has multifold the existing
stability issue associated with modern sub-100 nm SRAM cell design. Noise insertion in the …

Design of SRAM cell for low power portable healthcare applications

S Pal, S Bose, A Islam - Microsystem Technologies, 2020 - Springer
Biomedical applications such as body area networks (BANs) require the design of power-
efficient SRAM cells for the extended battery lives of BAN sensor nodes. In this work, we …

A novel approach to design SRAM cells for low leakage and improved stability

T Tripathi, DS Chauhan, SK Singh - Journal of Low Power Electronics and …, 2018 - mdpi.com
The semiconductor electronic industry is advancing at a very fast pace. The size of portable
and handheld devices are shrinking day by day and the demand for longer battery backup is …

A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array

D Nayak, DP Acharya, PK Rout, U Nanda - Solid-State Electronics, 2018 - Elsevier
The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute
for high data reliability. But the single ended nature of read operation demands a complete V …