The linear and nonlinear optical absorption associated with the transition between 1s and 2s
states corresponding to the electron-donor-impurity complex in GaAs/Ga 1− x Al x As three …

In this work, the changes in the energy of electrons and holes, oscillator strength and
interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor …

In this study, effect of the number of wells and quantum ring thickness on subband electronic
structure, ground state wave function, Fermi energy and linear refractive index changes of …

We consider the effects of hydrostatic pressure, temperature, aluminum concentration and
impurity position on hydrogen-like donor binding energy in GaAs/Ga1− xAlxAs concentric …

The possibility of tailoring III-V GaAs/Al 0.3 Ga 0.7 As concentric double quantum rings
(CDQRs) by tuning the central barrier, width, and height of the rings brings out carrier …

The electronic structure of the semiconductor double concentric quantum nano-ring (DCQR)
is studied under the single sub-band effective mass approach. We show that in the weakly …

Bound states of the Hamiltonian describing a quantum particle living on a three-dimensional
straight strip of width d are investigated. We impose the Neumann boundary condition on the …

In this work, we have studied the effect of external magnetic field on linear absorption
coefficient of AlN/GaN constant total effective radius multi-wells quantum ring and dots …

In this study, we have investigated the effect of the number of wells and quantum ring
thickness on subband energy levels, intersubband transition energies and optical properties …

In this paper, we study the effect of the number of wells, inner (R in) and outer (R out)
quantum ring radiuses, and magnetic field as controlling tools to change the nonlinearity in …