Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the
performance of the tunnel field effect transistors (TFETs). In this article, the transport …

This study aimed to investigate the influence of temperature on the reliability of an ultrathin-
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …

Background: As the size of the field effect transistors is reduced down to nanometers, the
performance of the devices is affected by various short-channel effects. To overcome these …

By means of a dielectric modulation method, this research offers the first ever 2D analytical
model for the surface potential of a dual material gate Ferroelectric-TFET (DMG-Fe-TFET) …

For hybrid AC/DC microgrid (HMG) under master–slave control strategy, DGs usually adopt
constant power control (P control) in gird-connected mode and at least one DG adopts …

In this paper, an analytical model has been developed for a single gate tunnel FET,
introduced with a highly doped pocket in the vicinity of the source-channel junction and the …

This paper presents a novel 2D analytical model for investigating the influence of the
ferroelectric dielectric on the performance of pocket doped double gate tunnel FET. It takes …

The paper puts forth an innovative strategy based on Ternary logic and Graphene Nano-
Ribbon Field Effect Transistors (GNRFET). Ternary logic is a multiple valued logic (MVL) …

A Dual Material Double Gate TFET (DMDG-TFET) model with gate stacking has been
presented for low power applications. It uses 2D layered material in the source region to …

This presentation offers an outline of the current status of research and development in the
field of graphene field-effect transistors (GFETs). Graphene, a one-atom-thick sheet of …