Design architectures of the CMOS power amplifier for 2.4 GHz ISM band applications: an overview
Power amplifiers (PAs) are among the most crucial functional blocks in the radio frequency
(RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to …
(RF) frontend for reliable wireless communication. PAs amplify and boost the input signal to …
A new design for mode transfer-based harmonic tuned power amplifier (MHPA)
M Chegini, J Yavandhasani, M Kamarei - AEU-International Journal of …, 2022 - Elsevier
Available onlineThis paper presents the design, implementation and measurement results
for a 0.8–2.1 GHz Mode transfer-based Harmonic tuned Power Amplifier (MHPA). The …
for a 0.8–2.1 GHz Mode transfer-based Harmonic tuned Power Amplifier (MHPA). The …
Active inductor-based tunable impedance matching network for RF power amplifier application
A Saberkari, S Ziabakhsh, H Martinez, E Alarcón - Integration, 2016 - Elsevier
This paper presents the use of a new structure of active inductor named cascoded flipped-
active inductor (CASFAI) in a T-type high-pass tunable output matching network of a class-E …
active inductor (CASFAI) in a T-type high-pass tunable output matching network of a class-E …
A CMOS power amplifier with reconfigurable power cells and matching network for 2.4 GHz wireless communications
This paper presents a twelve-mode 130 nm CMOS power amplifier with reconfigurable
output matching network (OMN) and supply voltage selection. To select operation modes …
output matching network (OMN) and supply voltage selection. To select operation modes …
A concurrent dual-band continuous Class-F power amplifier with intermodulation impedance tuning: Analysis and design technique
In this paper, first the behaviour of dual-band continuous class-F (Class-CF) power
amplifiers under concurrent input drive at both bands are studied. Then, a novel structure …
amplifiers under concurrent input drive at both bands are studied. Then, a novel structure …
A linear-high range output power control technique for cascode power amplifiers
H Bameri, A Hakimi, M Movahhedi - Microelectronics journal, 2011 - Elsevier
In this paper a new linear power control technique is presented to control the output power
of cascode power amplifiers. Using this technique the output power of power amplifier can …
of cascode power amplifiers. Using this technique the output power of power amplifier can …
High efficiency CMOS Class E power amplifier using 0.13 µm technology
SAZ Murad, MF Ahamd, MM Shahimin… - … IEEE Symposium on …, 2012 - ieeexplore.ieee.org
This paper presents the design of a 2.4-GHz CMOS Class E power amplifier (PA) for
wireless applications in Silterra 0.13-μm CMOS technology. The Class E PA proposed in this …
wireless applications in Silterra 0.13-μm CMOS technology. The Class E PA proposed in this …
Design of 2.4 GHz Two Stages Cascode Class E Power Amplifier for Wireless Application
KS Yi, SAZ Murad, SN Mohyar - Journal of Physics: Conference …, 2021 - iopscience.iop.org
A low-power consumption internet-connected device has received considerable attention in
recent years. Power amplifier (PA) is the most significant block in radio frequency (RF) …
recent years. Power amplifier (PA) is the most significant block in radio frequency (RF) …
An Approach to Increase Power‐Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology
HH Jobaneh - IET Circuits, Devices & Systems, 2023 - Wiley Online Library
A new approach to increasing the power‐added efficiency (PAE) of a class E power
amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a …
amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a …
High efficiency 2.4 GHz CMOS two stages class-F power amplifier for wireless transmitters
S AZ Murad, MN Md Isa, FA Bakar… - Recent Advances in …, 2016 - ingentaconnect.com
A design of CMOS class-F power amplifier (PA) at 2.4-GHz for wireless transmitters is
presented. The class-F PA design is implemented by using 0.13-μm CMOS process. The …
presented. The class-F PA design is implemented by using 0.13-μm CMOS process. The …