A review of high-performance, state-of-the-art, active power-factor-correction (PFC)
techniques for high-power, single-phase applications is presented. The merits and …

High-Brightness Light Emitting Diodes (HB-LEDs) are considered the future trend in lighting
not only due to their high efficiency and high reliability, but also due to their other …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

High-brightness LEDs are considered remarkable lighting devices due to their high
reliability, chromatic variety, and increasing efficiency. As a result, a high number of …

A performance comparison of an interleaved boost converter (IBC) using Si and SiC diodes
for photovoltaic (PV) energy conversion systems is presented in this paper. The performance …

The implementation of an interleaved boost converter (IBC) using SiC diodes for
photovoltaic (PV) applications is presented in this paper. The converter consists of two …

In this paper, the application performances of isolated bidirectional dc-dc converters (IBDCs)
based on all-Si and all-SiC power devices for next-generation power conversion application …

This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and
silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The …

This paper reports on the fabrication technology and packaging strategy for 300-V 5-A
silicon carbide Schottky diodes with a wide temperature operation range capability (between …

SiC-based diodes and MOSFETs switch extremely quickly with low conduction losses. Thus,
from the perspective of efficiency, such devices are ideal for a continuous conduction mode …