Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
Integration of boron arsenide cooling substrates into gallium nitride devices
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …
dissipation have led to the exploration of novel semiconductor materials with high thermal …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …
the potential to achieve higher switching performance and efficiency and lower …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
A review of Raman thermography for electronic and opto-electronic device measurement with submicron spatial and nanosecond temporal resolution
M Kuball, JW Pomeroy - IEEE Transactions on Device and …, 2016 - ieeexplore.ieee.org
We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …
temperature in and around the active area of semiconductor devices with submicron spatial …
Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers
D Shoemaker, M Malakoutian… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
GaN radio frequency (RF) power amplifiers offer many benefits including high power
density, reduced device footprint, high operating voltage, and excellent gain and power …
density, reduced device footprint, high operating voltage, and excellent gain and power …
A review of direct drive proportional electrohydraulic spool valves: industrial state-of-the-art and research advancements
P Tamburrano, AR Plummer… - Journal of …, 2019 - asmedigitalcollection.asme.org
This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …
spool valves, which are widely used hydraulic components in the industrial and …