Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces
Electron accumulation is found to occur at the surface of wurtzite (11 2 0),(0001), and (000
1) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is …
1) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is …
Pit assisted oxygen chemisorption on GaN surfaces
A comprehensive analysis of oxygen chemisorption on epitaxial gallium nitride (GaN) films
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
grown at different substrate temperatures via RF-molecular beam epitaxy was carried out …
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-
breaking material for high frequency electronics. The difficulty of depositing high-quality …
breaking material for high frequency electronics. The difficulty of depositing high-quality …
Absence of Fermi-level pinning at cleaved nonpolar InN surfaces
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well
above the conduction band edge, leading to strong surface band bending and electron …
above the conduction band edge, leading to strong surface band bending and electron …
Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy
T Yamaguchi, Y Nanishi - Applied physics express, 2009 - iopscience.iop.org
In situ In droplet elimination by radical beam irradiation (DERI) was demonstrated for the
growth of high-quality InN by radio-frequency plasma-assisted molecular beam epitaxy (RF …
growth of high-quality InN by radio-frequency plasma-assisted molecular beam epitaxy (RF …
Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors
Significant polarity-related effects were observed in the near-surface atomic composition
and valence band electronic structure of ZnO single crystals, investigated by x-ray …
and valence band electronic structure of ZnO single crystals, investigated by x-ray …
Surface chemistry and electronic structure of nonpolar and polar GaN films
Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-
Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is …
Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is …
Electrical conductivity of InN nanowires and the influence of the native indium oxide formed at their surface
The electrical properties of InN nanowires were investigated in four-point probe
measurements. The dependence of the conductance on the wire diameter allows …
measurements. The dependence of the conductance on the wire diameter allows …
[HTML][HTML] Determination of the surface band bending in InxGa1− xN films by hard x-ray photoemission spectroscopy
M Lozac'h, S Ueda, S Liu, H Yoshikawa… - … and Technology of …, 2013 - Taylor & Francis
Core-level and valence band spectra of In x Ga 1− x N films were measured using hard x-ray
photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the …
photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the …
Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation
CM Matthews, Z Engel, K Motoki… - Crystal Growth & …, 2023 - ACS Publications
Phase separation of indium-bearing III-nitrides is difficult to control and is a major challenge
in the development of these materials. On the other hand, this same process does not occur …
in the development of these materials. On the other hand, this same process does not occur …