Effect of growth time on structural, morphological and electrical properties of tungsten oxide nanowire
SAA Terohid, S Heidari, A Jafari, S Asgary - Applied Physics A, 2018 - Springer
In this work, tungsten oxide nanowires were grown directly on a tungsten substrate in 800° C
using thermal evaporation method in a horizontal tube furnace. The effect of growth time on …
using thermal evaporation method in a horizontal tube furnace. The effect of growth time on …
Localized heating induced chemical vapor deposition for one-dimensional nanostructure synthesis
BD Sosnowchik, L Lin, O Englander - Journal of Applied Physics, 2010 - pubs.aip.org
Localized heating has emerged as a viable technique for the site specific synthesis of one-
dimensional (1D) nanostructures. By localizing the heat source, the extent of chemical vapor …
dimensional (1D) nanostructures. By localizing the heat source, the extent of chemical vapor …
Room Temperature Polymorphism in WO3 Produced by Resistive Heating of W Wires
Polymorphous WO3 micro-and nanostructures have been synthesized by the controlled
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
Low-temperature selective growth of tungsten oxide nanowires by controlled nanoscale stress induction
We report a unique approach for the patterned growth of single-crystalline tungsten oxide
(WOx) nanowires based on localized stress-induction. Ions implanted into the desired …
(WOx) nanowires based on localized stress-induction. Ions implanted into the desired …
Fabrication of Si protrusions by local melting of a narrow current path on a Si wafer via resistive heating
T Nishimura, M Tomitori - Japanese Journal of Applied Physics, 2021 - iopscience.iop.org
Si protrusions were fabricated by surface melting and resolidifying of a Si (111) wafer
covered with a 100 nm thick molybdenum (Mo) layer, in which a narrow region was …
covered with a 100 nm thick molybdenum (Mo) layer, in which a narrow region was …
Solid-phase growth mechanism of tungsten oxide nanowires synthesized on sputtered tungsten film
Y Kojima, K Kasuya, K Nagato, T Hamaguchi… - Journal of Vacuum …, 2008 - pubs.aip.org
The authors have proposed a solid-phase growth mechanism of tungsten oxide nanowires
synthesized on sputtered tungsten films. Transmission electron microscopy observation, x …
synthesized on sputtered tungsten films. Transmission electron microscopy observation, x …
Field emission properties of discretely synthesized tungsten oxide nanowires
M Furubayashi, K Nagato, H Moritani… - Microelectronic …, 2010 - Elsevier
We investigated the effect of the degree of dispersion of tungsten oxide nanowires on their
field emission properties. We patterned tungsten films with 1× 1μm2 islands of various …
field emission properties. We patterned tungsten films with 1× 1μm2 islands of various …
[PDF][PDF] Room Temperature Polymorphism in WO3 Produced by Resistive Heating of W Wires. Nanomaterials 2023, 13, 884
Polymorphous WO3 micro-and nanostructures have been synthesized by the controlled
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
Room temperature polymorphism in WO_ (3) produced by resistive heating of W wires
B Rodriguez Fernandez, J Dolado, J López Sánchez… - 2023 - docta.ucm.es
Polymorphous WO3 micro-and nanostructures have been synthesized by the controlled
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
Joule heating of tungsten wires under ambient conditions in a few seconds. The growth on …
自組裝單分子層修飾在矽奈米感測器應用
林宗翰， 許鉦宗 - 2012 - ir.lib.nycu.edu.tw
本研究主要在於利用焦耳熱效應選擇性移除自組裝單分子層聚乙二醇矽烷(MPEG-sil)
以及十八烷基三氯矽烷(OTS), 選擇性修飾目的為降低非偵測區外非專一性吸附來提高低濃度生 …
以及十八烷基三氯矽烷(OTS), 選擇性修飾目的為降低非偵測區外非專一性吸附來提高低濃度生 …