5,362.972 A 1 1/1994 Yazawa et al......... 257.13 electronic, photonic structures, and
electromechanical 5,381,753 A 1/1995 Okajima et al............... 117/12 MEMS devices, are …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

The present invention relates to semiconductor devices comprising semiconductor
nanoelements. In particular the invention relates to devices having a volume element having …

The present invention relates to light emitting diodes, LEDs. In particular the invention
relates to a LED comprising a nanowire as an active component. The nanostructured LED …

A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on
a substrate in a predetermined spatial configuration, for use for example as a photonic band …

We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs
nano-pillar array on a partially masked InP (111) B substrate. This technique is very …

(57) ABSTRACT A method for forming a nanowhisker of, eg, a III-V semi conductor material
on a silicon Substrate, comprises: prepar ing a Surface of the silicon Substrate with …

We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar
structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By …

Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility
conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first …

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation
conditions to inhibit growth in a preferential direction. In a preferred implementation,< 001> …