[PDF][PDF] Thermal annealing ambiance effect on phosphorus passivation and reactivation mechanisms in silicon-based Schottky diodes hydrogenated by MW-ECR …

D Belfennache, D Madi, R Yekhlef… - Semiconductor …, 2021 - journal-spqeo.org.ua
The main objective of this work is to investigate the effect of thermal annealing in forming
gas atmosphere on the mechanism of deactivation and reactivation of phosphorus in silicon …

Optical Characteristics of Antireflection of SiN Layer on the Si Substrate

H Chen, D Xie - … and Intelligent Transportation Systems: Volume 1 …, 2016 - Springer
This paper studies the optical characteristics of SiN antireflection coating (ARC) on the Si
substrate and mainly focuses on the effects of different wavelength and angle of incident …