This paper describes the electrode work-function, oxide thickness, gate-source/drain
underlap, and silicon thick ness optimization required to realize dual-V th independent-gate …

Three-Independent-Gate Field Effect Transistors (TIGFETs) are capable of different modes of
operation thanks to their additional gate terminals. By electrically controlling their side gates …

Double-gate FinFET is a novel device structure used in the nanometer regime, whereas the
conventional CMOS technology's performance deteriorates due to increased short channel …

Multi-gate CMOS devices promise to usher an era of transistors with good electrostatic
integrity at the sub-22nm nodes, which makes it essential to rethink traditional approaches to …

This paper proposes the realization of dual-threshold independent-gate FinFETs by
optimizing the FinFET process parameters including the electrode work function, silicon …

This paper investigates the performance of array multipliers utilizing FinFET models for the
following feature sizes: 20nm, 16nm, 14nm, 10nm and 7nm. Using basic array multiplier …

An extensive analysis of sub-10-nm logic building blocks utilizing ultracompact logic gates
based on recently proposed gate workfunction engineering (WFE) approach is provided …

Wide fan-in dynamic logic OR gate has always been an integral part of high speed
microprocessors. However, low noise immunity of wide fan-in dynamic logic gate is always …

Independent‐Gate (IG) FinFET is a promising device in circuit applications due to its two
separated gates, which can be used independently. In this paper, we proposed a …

There are many reasons for reverse engineering or re-engineering legacy systems. To date,
many approaches concerning the re-engineering of legacy systems have been made. The …