A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET
The reliability of the CMOS devices is severely affected due to the presence of interface (S
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
i/S i O 2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap …
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET
Temperature plays a decisive role in semiconductor device performance and reliability
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
analysis. The effect is more severe in a negative capacitance (NC) transistor, as the …
A comprehensive analysis of nanosheet FET and its CMOS circuit applications at elevated temperatures
NA Kumari, P Prithvi - Silicon, 2023 - Springer
Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
Investigation of self-heating effect in tree-FETs by interbridging stacked nanosheets: a reliability perspective
S Srivastava, M Shashidhara… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
Gate stack analysis of nanosheet FET for analog and digital circuit applications
NA Kumari, V Vijayvargiya, AK Upadhyay… - ECS Journal of Solid …, 2023 - iopscience.iop.org
This manuscript demonstrates the performance comparison of vertically stacked nanosheet
FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …
FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …
A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Self-heating and interface traps assisted early aging revelation and reliability analysis of negative capacitance FinFET
The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
realistic aspects of transport physics, remains challenging. In this paper, we investigated the …
Investigation of Analog/RF and linearity performance with self-heating effect in nanosheet FET
In vertically stacked gate-all-around Nanosheet FET (NSFET), the channels/sheets are
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …