(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Nanomembrane is an independent structure with a thickness of 1–100 nm and with much
large lateral dimensions. Due to the unique properties of nanomembranes, research on the …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …

The instability during the growth and processing of epitaxial GeSn layers with high Sn molar
fraction and high compressive strain is still to be fully studied. In this work, the relationship …

Material crystallinity is paramount in determining the photoelectric performances and device
applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a …

In this study, we report the growth and characterization of high-quality SiGe/SiO2 core–shell
nanocrystals on an insulator. Our approach involves the solid-state dewetting of a …

The elastic response of monolayer silicon-germanium alloys (Si 1-x Ge x, 0≤ x≤ 1) is
investigated using first-principles calculations. It is found that the atomic arrangement of …

In modern electronics surface-supported semiconductor structures are widely used. Epitaxy
is one of the main methods to obtain appliances of micro-and nanoelectronics. The misfit of …