Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …
capacity power converters. However, transient imbalance current, during turn-on and-off …
Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
of the power conversion systems. However, due to mismatched circuit parameters or …
Influence of paralleling dies and paralleling half-bridges on transient current distribution in multichip power modules
This letter addresses the transient current distribution in the multichip half-bridge power
modules, where two types of paralleling connections with different current commutation …
modules, where two types of paralleling connections with different current commutation …
A novel DBC layout for current imbalance mitigation in SiC MOSFET multichip power modules
This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …
imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared …
Effects of auxiliary-source connections in multichip power module
Auxiliary-source bond wires and connections are widely used in power modules with
paralleled mosfets or insulated gate bipolar transistor (IGBTs). This paper investigates the …
paralleled mosfets or insulated gate bipolar transistor (IGBTs). This paper investigates the …
Design of a paralleled SiC MOSFET half-bridge unit with distributed arrangement of DC capacitors
J Qu, Q Zhang, X Yuan, S Cui - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Discrete silicon carbide (SiC) mosfets are usually connected in parallel to increase their
current carrying capacity. However, unequal switching losses and unequal transient current …
current carrying capacity. However, unequal switching losses and unequal transient current …
Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs
Multichip power modules use parallel connected chips to achieve high current rating. Due to
a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module …
a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module …
Variable gate voltage control for paralleled SiC MOSFETs
Y Wei, R Sweeting, MM Hossain… - … IEEE Workshop on …, 2020 - ieeexplore.ieee.org
Silicon carbide (SiC) MOSFETs have been widely used in different power conversion
applications due to their advantages of high switching frequency and low loss. Parallel …
applications due to their advantages of high switching frequency and low loss. Parallel …
Impact of carriers injection level on transients of discrete and paralleled silicon and 4h-sic npn bjts
The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as
high power switching devices with high voltage ratings in range of 1.7 kV and high operating …
high power switching devices with high voltage ratings in range of 1.7 kV and high operating …
Passive balancing of switching transients between paralleled SiC MOSFETs
Y Mao - 2018 - vtechworks.lib.vt.edu
The SiC MOSFET has attracted interest due to its superior characteristics compared to its Si
counterpart. Several SiC MOSFETs are usually paralleled to increase current capability …
counterpart. Several SiC MOSFETs are usually paralleled to increase current capability …