Redox-based memristive switching has been observed in many binary transition metal
oxides and related compounds. Since, on the one hand, many recent reports utilize TiO 2 for …

Abstract A Resistive Random Access Memory (RRAM), where the memory performance
principally originated from 'resistive'change rather than 'capacitive'one (the case with …

In this paper, we are reporting the fabrication of memristor device (Ag/TiO2/Cu) using
electrohydrodynamic inkjet printing technology. The titanium oxide (TiO2) active layer was …

Forming free and thermally stable bipolar resistive switching behavior was observed in the
memory devices composed of graphene oxide (GO) thin films on ITO coated glass substrate …

Fabrication of memristor device (Ag/TiO 2/Al) with TiO 2 active layer using hydrothermal
process is reported. The structural, surface morphological and optical properties of …

The self-rectifying resistive switching (RS) characteristics of molybdenum oxide (MoO x)
semiconductors are investigated in this paper. The MoO x RS layers are deposited by radio …

Resistance change random access memories based on transition metal oxides had been
recently proposed as promising candidates for the next generation of memory devices, due …

The growing demand for portable and bendable nonvolatile memory systems has motivated
extensive research in the field of flexible resistive random access memory (RRAM) devices …

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor
structures, consist of insulating layers I sandwiched between metal layers M, where the …

Memristors can mimic the functions of biological synapse, where it can simultaneously store
the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb 2 O 5/Pt …