A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

[HTML][HTML] Pattern classification by memristive crossbar circuits using ex situ and in situ training

F Alibart, E Zamanidoost, DB Strukov - Nature communications, 2013 - nature.com
Memristors are memory resistors that promise the efficient implementation of synaptic
weights in artificial neural networks. Whereas demonstrations of the synaptic operation of …

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

F Alibart, L Gao, BD Hoskins, DB Strukov - Nanotechnology, 2012 - iopscience.iop.org
Using memristive properties common for titanium dioxide thin film devices, we designed a
simple write algorithm to tune device conductance at a specific bias point to 1% relative …

[HTML][HTML] High switching endurance in TaOx memristive devices

JJ Yang, MX Zhang, JP Strachan, F Miao… - Applied Physics …, 2010 - pubs.aip.org
We demonstrate over 1× 10 10 open-loop switching cycles from a simple memristive device
stack of Pt/TaO x/Ta⁠. We compare this system to a similar device stack based on titanium …

[HTML][HTML] Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

H Jiang, L Han, P Lin, Z Wang, MH Jang, Q Wu… - Scientific reports, 2016 - nature.com
Memristive devices are promising candidates for the next generation non-volatile memory
and neuromorphic computing. It has been widely accepted that the motion of oxygen anions …

Recent advances in resistive random access memory based on lead halide perovskite

J Di, J Du, Z Lin, S Liu, J Ouyang, J Chang - InfoMat, 2021 - Wiley Online Library
Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐
emitting diodes, photodetectors, and other fields due to their excellent properties. Besides …

Nanoionics‐enabled memristive devices: strategies and materials for neuromorphic applications

Z Wang, L Wang, M Nagai, L Xie, M Yi… - Advanced Electronic …, 2017 - Wiley Online Library
Memristors have been intensively studied in recent years as potential building blocks for the
construction of versatile neuromorphic architectures. The prevalent developments focus on …

Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode

Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen… - ACS …, 2010 - ACS Publications
Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale
device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic …

Emerging NVM: A survey on architectural integration and research challenges

J Boukhobza, S Rubini, R Chen, Z Shao - ACM Transactions on Design …, 2017 - dl.acm.org
There has been a surge of interest in Non-Volatile Memory (NVM) in recent years. With
many advantages, such as density and power consumption, NVM is carving out a place in …