The ability to tailor compound semiconductors and to integrate them onto foreign substrates
can lead to superior or novel functionalities with a potential impact on various areas in …

This review provides an overview of the current status of ion-implantation research in silicon,
germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon …

A high-performance filter is the key component in 5G communication. A surface acoustic
wave (SAW) resonator fabricated on a piezoelectric thin film instead of piezoelectric bulk …

Vacancy‐type defects in Mg‐implanted GaN were probed using a monoenergetic positron
beam. Mg ions of multiple energies (15–180 keV) were implanted to provide a 200‐nm …

Vacancy‐type defects in Mg‐implanted GaN with and without hydrogen (H) implantation are
probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN …

Conclusion The defects and their thermo-evolution in the hetero-integrated GaN films on Si
(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the …

Hydrogen and/or helium implantation-induced surface blistering and layer splitting in
compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The …

Defects in ammonothermal GaN have been studied using a monoenergetic positron beam.
Through measurements of Doppler broadening spectra of the annihilation radiation, the …

In recent years, the remarkable properties and potential applications of III-nitride (III-N)
semiconductors have sparked a significant interest in the field of microelectromechanical …

The lattice disorder and elemental distribution in He-implanted GaN epilayer at a fluence of
4× 10 16 He+/cm 2 at 450° C have been investigated by a combination of conventional, high …