Interplay between optical vortices and condensed matter
Interest in the multiple facets of optical vortices has flourished in the last three decades. This
review examines the basic research and applications of the interplay between optical …
review examines the basic research and applications of the interplay between optical …
A gallium nitride single-photon source operating at 200 K
Fundamentally secure quantum cryptography has still not seen widespread application
owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot …
owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot …
Ultraclean single photon emission from a GaN quantum dot
Wide bandgap III-nitride quantum dots (QDs) are promising materials for the realization of
solid-state single-photon sources, especially operating at room temperature. However, so far …
solid-state single-photon sources, especially operating at room temperature. However, so far …
Radiative lifetime of a single electron-hole pair in quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux… - Physical Review B …, 2006 - APS
Wurtzite Ga N∕ Al N quantum dots (QDs) are studied by time-resolved photoluminescence.
Careful measurements allow us to reach the regime of a single electron-hole pair per dot …
Careful measurements allow us to reach the regime of a single electron-hole pair per dot …
Polar and nonpolar GaN quantum dots
B Daudin - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Growth, structural and optical properties of GaN quantum dots are reviewed, with a special
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …
Ultranarrow luminescence linewidth of silicon nanocrystals and influence of matrix
The luminescence linewidth of individual silicon nanocrystals was characterized by single-
dot spectroscopy, and an ultranarrow linewidth of∼ 200 μeV at 10 K was found. This value …
dot spectroscopy, and an ultranarrow linewidth of∼ 200 μeV at 10 K was found. This value …
Exciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires
J Renard, R Songmuang, C Bougerol, B Daudin… - Nano …, 2008 - ACS Publications
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in
single nanowires. At low excitation power, single exciton lines with full width at half …
single nanowires. At low excitation power, single exciton lines with full width at half …
Excitons in (Al, Ga) N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings
A Ibanez, N Nikitskiy, A Zaiter, P Valvin… - Journal of Applied …, 2023 - pubs.aip.org
The luminescence efficiency of AlxGa1− xN quantum dots (QDs) and quantum wells (QWs),
buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm …
buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm …
Photophysics of GaN single-photon emitters in the visible spectral range
In this work, we present a detailed photophysical analysis of recently discovered, optically
stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved …
stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved …
III-nitride quantum dots as single photon emitters
III-nitride quantum dots are proving to be promising for application to single photon emitting
devices. Research around the globe is revealing several interesting properties of these …
devices. Research around the globe is revealing several interesting properties of these …