[HTML][HTML] Thermodynamic theory of growth of nanostructures
XL Li, CX Wang, GW Yang - Progress in Materials Science, 2014 - Elsevier
Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …
nanowires (NWs), have been extensively studied because of their physical properties and …
Compositional mapping of semiconductor quantum dots and rings
In this article we review the extensive experimental work on the compositional mapping of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography
Scanning probe microscopy combined with selective wet chemical etching is employed to
quantitatively determine the full three-dimensional (3D) composition profiles of single …
quantitatively determine the full three-dimensional (3D) composition profiles of single …
Coarsening, mixing, and motion: the complex evolution of epitaxial islands
During heteroepitaxy, misfit strain causes nanoscale islands to form spontaneously, as “self-
assembled quantum dots.” The growth and evolution of these islands are remarkably …
assembled quantum dots.” The growth and evolution of these islands are remarkably …
Atomic structure and energy spectrum of Ga (As, P)/GaP heterostructures
DS Abramkin, MA Putyato, SA Budennyy… - Journal of Applied …, 2012 - pubs.aip.org
The atomic structure and energy spectrum of Ga (As, P)/GaP heterostructures were studied.
It was shown that the deposition of GaAs of the same nominal thickness leads to the …
It was shown that the deposition of GaAs of the same nominal thickness leads to the …
Order and disorder in the heteroepitaxy of semiconductor nanostructures
The heteroepitaxy of semiconductor pairs with a small lattice mismatch is a process of
tremendous interest in materials science and technology. The principal mechanism of strain …
tremendous interest in materials science and technology. The principal mechanism of strain …
Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures: MAD and DAFS for …
The aim of this paper is to illustrate the use of Multi-Wavelength Anomalous Diffraction
(MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of …
(MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of …
High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials
HT Chang, CC Wang, JC Hsu, MT Hung, PW Li… - Applied physics …, 2013 - pubs.aip.org
We present an effective approach to grow high-quality thin film of composite quantum dots
(CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge …
(CQDs) as a building block for thermoelectric materials, in which 3 times the usual Ge …
Designer Ge/Si composite quantum dots with enhanced thermoelectric properties
HT Chang, SY Wang, SW Lee - Nanoscale, 2014 - pubs.rsc.org
An otherwise random, self-assembly of Ge/Si composite quantum dots (CQDs) on Si was
controlled by inserting a layer of Si, sub-dot stacks, and post-annealing to produce micron …
controlled by inserting a layer of Si, sub-dot stacks, and post-annealing to produce micron …
Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates
AP del Pino, E György, IC Marcus, J Roqueta… - …, 2011 - iopscience.iop.org
Laser irradiation of Ge quantum dots (QDs) grown on Si (100) substrates by solid-source
molecular beam epitaxy has been performed using a Nd: YAG laser (532 nm wavelength, 5 …
molecular beam epitaxy has been performed using a Nd: YAG laser (532 nm wavelength, 5 …