MeV electron irradiated InGaAs flexible solar cells were investigated based on solar cell I–V
characteristics, external quantum efficiency, photoluminescence, and deep-level transient …

Displacement damage induced by space radiation is still a considerable challenge of
expanding application of GaAs-based devices (eg solar cell, et al.) in space missions. In the …

The relative rate of optical to thermal carrier decay plays a critical role in the performance of
optoelectronic devices, and radiation-induced point defects can significantly affect this ratio …

The shortening of the minority carrier lifetime is the main reason for the degradation of the
electrical performance of solar cells; therefore, it is particularly important to evaluate the …

The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell
emitter thickness induced by proton irradiation is studied using numerical simulation. The …

In this paper, the state-of-the-art triple junction solar cell with three sub cells and two tunnel
diodes is modeled using two dimensional (2D) APSYS finite element analysis software tool …

The degradation on the GaAs sub-cell of GaInP/GaAs/Ge triple-junction solar cells caused
by different types of defects induced by 1 MeV electron irradiation is studied by numerical …

This paper was reported high-energy proton exposure effects on triple-junction GaInP
2/InGaAs/Ge space grade solar cells. In order to explore the degradation of solar cells in …

摘要研究了GaAs 光伏电池在532 nm 波长连续半导体激光器辐照下的输出特性, 并采用X
射线衍射, 光致发光, 电致发光和光学显微镜等方法研究了高功率密度激光下GaAs …

Radiation‐induced defects are responsible for solar cell degradation. The effects of radiation
and annealing on the defects of a GaAs/Ge solar cell are modeled and analyzed in this …