Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology
YU Kim, WJ Cho - Sensors, 2024 - mdpi.com
This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide
semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self …
semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self …
Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device
KP Chang, H Abushammala, M Sahoo… - Journal of Applied …, 2020 - pubs.aip.org
Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been
widely investigated for their tuneable electronic properties. There is a large spectrum of …
widely investigated for their tuneable electronic properties. There is a large spectrum of …
Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation
C Sandhya, AB Oak, N Chattar… - … on Electron Devices, 2010 - ieeexplore.ieee.org
Program/Erase (P/E) cycling endurance in poly-Si/Al 2 O 3/SiN/SiO 2/Si (SANOS) memories
is systematically studied. Cycling-induced trap generation, memory window (MW) closure …
is systematically studied. Cycling-induced trap generation, memory window (MW) closure …
Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications
A simple and low-cost process of embedding metal nanocrystals as charge storage centers
within a dielectric is demonstrated to address leakage issues associated with the scaling of …
within a dielectric is demonstrated to address leakage issues associated with the scaling of …
Modeling floating body Z-RAM storage cells
V Sverdlov, S Selberherr - 2010 27th International Conference …, 2010 - ieeexplore.ieee.org
Advanced floating body Z-RAM memory cells are studied. In particular, the scalability of the
cells is investigated. First, a Z-RAM cell based on a 50 nm gate length double-gate structure …
cells is investigated. First, a Z-RAM cell based on a 50 nm gate length double-gate structure …
Memory Devices
M Joodaki, M Joodaki - … in Nanoelectronic Devices: Logic, Memory and RF, 2013 - Springer
The second major portion of semiconductor production is devoted to memory products. In
2007, the worldwide memory chip industry including SRAM (static random access memory) …
2007, the worldwide memory chip industry including SRAM (static random access memory) …
[HTML][HTML] ONO ruptures caused by ONO implantation in a SONOS non-volatile memory device
SY Kim, IS Kim - Transactions on Electrical and Electronic Materials, 2011 - oak.go.kr
The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25㎛
embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic …
embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic …
전하트랩층에고전도대장벽층삽입을통한전하트랩플래시소자의리텐션특성개선
전석민 - 2018 - s-space.snu.ac.kr
본 연구는 Charge Trap Flash Memory 에서 Charge Trap Layer 로 일반적으로 사용하고 있는
SiN 에 SiN 대비 High Conduction Band Barrier 를 가지는 Al2O3 층을 삽입하여 소자의 …
SiN 에 SiN 대비 High Conduction Band Barrier 를 가지는 Al2O3 층을 삽입하여 소자의 …
[图书][B] Characterization and Modeling of Non-Volatile SONOS Semiconductor Memories with Gridded Capacitors
CJ Barthol - 2015 - search.proquest.com
The demand for high-capacity, low-power memory is increasing rapidly as modern portable
electronic devices boost performance while decreasing in size. Due to its many advantages …
electronic devices boost performance while decreasing in size. Due to its many advantages …
[PDF][PDF] NANOSTRUCTURED MATERIALS FOR MEMORY APPLICATIONS
HM STELLA - 2012 - core.ac.uk
I thank the Economic Development Board-Joint Industrial Programme and Globalfoundries
Singapore Pte Ltd for the research scholarship, for offering me the wonderful opportunity to …
Singapore Pte Ltd for the research scholarship, for offering me the wonderful opportunity to …