At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

BACKGROUND In the past two decades, quaternary alloys of III–V semiconductors have
been the subject of extensive theoretical and experimental research. Technologically, such …

InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) hold significant potential for mid-
infrared optoelectronics. However, their optical and structural behavior at high temperatures …

We present the weighted-sum expression of quaternary parameter estimations via balancing
surface bowing estimation errors. Expressions have been derived for both quaternary alloys …

Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported
herein. Utilizing the photoreflectance technique, the band gap energy for doped samples …

Bulk crystals of gallium antimonide were grown using the vertical Bridgman techniques. The
phase formation was confirmed by XRD studies. From dc and ac conductivity …

The results of a low-temperature (4.5 K) photoluminescence study of Te-doped GaSb layers
grown by liquid phase electroepitaxy are reported. A doubly ionizable native residual …

Liquid phase electroepitaxy of III-V semiconductors Page 1 ELSEVIER Journal of Crystal Growth
146 (1995) 277-282 ......... CRYSTAL GROWTH Liquid phase electroepitaxy of III-V …

Controlled doping of quaternary alloys of In x Ga 1− x As y Sb 1− y with tellurium is
fundamental to obtain the n-type layers needed for the development of optoelectronic …

Low-temperature photoluminescence (PL) study of liquid phase epitaxy grown undoped and
Sn doped GaIn 0.16 As 0.22 Sb layers lattice matched to InAs is reported. The quaternary …