We investigate the electronic properties of N-layer black phosphorus by means of an
analytical method based on a recently proposed tight-binding Hamiltonian involving 14 …

The central question in the field of two-dimensional (2D) materials is how a material
behaves when it is patterned at nanometer scale with different edge geometries. Due to the …

Tuning the band gap plays an important role for applicability of 2D materials in the
semiconductor industry. The present paper is a theoretical study on the band gap …

We show that proximity effects can be utilized to engineer van der Waals heterostructures
(vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and …

The effects of external electric and magnetic fields on the energy spectrum of quantum rings
made out of a bidimensional semiconductor material with anisotropic band structures are …

We study the transport properties of charge carriers in phosphorene with a mass term
through double barriers. The solutions of the energy spectrum are obtained and the …

We investigate the effects of atomic vacancies on the band structure of multilayer
phosphorene using a combination of the tight-binding model and the band unfolding …

For the pristine phosphorene nanoribbons (PNRs) with edge states, there exist two
categories of edge bands near the Fermi energy (EF), ie, the shuttle-shaped twofold …

The present work deals with the simulation and comparison of two tunneling field effect
transistors (TFETs) based on the single layers of armchair graphene nanoribbons (AGNRs) …

Using first-principles calculations, density functional theory, and the tight-binding method,
we investigate the optoelectronic properties of two-dimensional gallium phosphide (2D …