State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications
This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
By using technology computer aided design (TCAD) simulation, the aim of this paper is to
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
Design optimization techniques in nanosheet transistor for RF applications
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated
TCAD simulations. The effects of stack spacing and number of stacks on device performance …
TCAD simulations. The effects of stack spacing and number of stacks on device performance …
A machine learning approach for optimization of channel geometry and source/drain doping profile of stacked nanosheet transistors
H Xu, W Gan, L Cao, C Yang, J Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complex nonlinear dependence of ultra-scaled transistor performance on its channel
geometry and source/drain (S/D) doping profile bring obstacles in the advanced technology …
geometry and source/drain (S/D) doping profile bring obstacles in the advanced technology …
Multi- Strategies of 7-nm node Nanosheet FETs With Limited Nanosheet Spacing
In this paper, multi-threshold voltage (V th) scheme of 7-nm node nanosheet FETs (NSFETs)
with narrow NS spacing were successfully achieved by metal-gate work function (WF) and …
with narrow NS spacing were successfully achieved by metal-gate work function (WF) and …