Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …

In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

A porous medium is a special type of material where voids are created in a solid medium.
The introduction of pores into a bulk solid can profoundly affect its physical properties and …

An effective and inexpensive method is developed to fabricate periodic arrays by sacrificial
colloidal monolayer template route by chemical deposition and further physical deposition …

Porous n-GaN has been fabricated using electrochemical anodic etching in a 0.5 M H2SO4
solution in the dark for different biases (5.5–18.0 V). The pore morphology of the porous …

GaN with aligned nanopores was fabricated using a lateral anodic etching process in HNO3
solution. This laterally porous structure can be modified from triangular pores to quasi …

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-
GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si …

In this paper, a comprehensive quantitative investigation is conducted on III-N
electrochemical nanomachining to explore the underlying mechanisms. An electric circuit …

The electric field and radiated power of a radiating dipole located inside a spherical nano-
cavity are formulated to show that the nano-cavity structure or nanoscale-cavity effect can …

Etching of gallium nitride for various device applications has attracted much attention;
however, previous reports have all been performed in acidic or basic etchant solutions …