Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN
The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …
Ultraviolet photodetectors: From photocathodes to low-dimensional solids
The paper presents the long-term evolution and recent development of ultraviolet
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …
Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …
High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
Polarimetric image sensor and fermi level shifting induced multichannel transition based on 2D PdPS
Abstract 2D materials have been attracting high interest in recent years due to their low
structural symmetry, excellent photoresponse, and high air stability. However, most 2D …
structural symmetry, excellent photoresponse, and high air stability. However, most 2D …
[HTML][HTML] Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias
Abstract Ga 2 O 3-based solar-blind ultraviolet photodetectors (PDs) have stimulated
extensive attention for covering both civilian and military applications. During the past …
extensive attention for covering both civilian and military applications. During the past …
The road ahead for ultrawide bandgap solar-blind UV photodetectors
A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
Aqueous‐Printed Ga2O3 Films for High‐Performance Flexible and Heat‐Resistant Deep Ultraviolet Photodetector and Array
High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide
(Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV …
(Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV …
Ultrahigh‐Performance Solar‐Blind Photodetectors Based on High Quality Heteroepitaxial Single Crystalline β‐Ga2O3 Film Grown by Vacuumfree, Low‐Cost Mist …
Y Xu, Y Cheng, Z Li, D Chen, S Xu… - Advanced Materials …, 2021 - Wiley Online Library
Due to the suitable bandgap, superior chemical and physical properties, the β‐phase
gallium oxide (β‐Ga2O3) has the great potential to fabricate the deep ultraviolet solar‐blind …
gallium oxide (β‐Ga2O3) has the great potential to fabricate the deep ultraviolet solar‐blind …