The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
A challenging approach, but one providing a key solution to material growth, remote epitaxy
(RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a …
(RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a …
[PDF][PDF] Large-scale and high-quality III-nitride membranes through microcavity-assisted crack propagation by engineering tensile-stressed Ni layers
Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic
bonds. This tight bonding presents tremendous challenges in developing III-nitride …
bonds. This tight bonding presents tremendous challenges in developing III-nitride …
Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth
J Li, Y Xu, J Tao, X Cai, Y Wang, G Wang… - Crystal Growth & …, 2023 - ACS Publications
In the past two decades, using dielectric materials such as SiO2 as a mask for the lateral
epitaxial growth of gallium nitride (GaN) has matured, but the properties of films using …
epitaxial growth of gallium nitride (GaN) has matured, but the properties of films using …
Impact of graphene state on the orientation of III–nitride
JH Park, N Hu, MD Park, J Wang, X Yang… - Applied Physics …, 2023 - pubs.aip.org
ABSTRACT We attempted to grow (10–13) semi-polar GaN on graphene to confirm the
possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was …
possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was …
Transferable Thru-Hole Epitaxy of GaN and ZnO, Respectively, Over Graphene and MoS2 as a 2D Space Layer
H Lee, M Kim, D Jang, S Jang, WI Park… - Crystal Growth & …, 2022 - ACS Publications
It has been challenging to grow a readily-detachable crystalline film on a crystalline
substrate. This is because (1) strong chemical bondings between the film material and the …
substrate. This is because (1) strong chemical bondings between the film material and the …
High performance UV photodetectors based on W doped δ-Ta2O5 single crystalline films
Y Le, X Ma, H Xiao, C Luan, B Zhang, J Ma - Applied Physics Letters, 2023 - pubs.aip.org
Amorphous or polycrystalline tantalum pentoxide (Ta 2 O 5) films with high resistance have
been widely used in semiconductor devices as insulating dielectric layers. In this work …
been widely used in semiconductor devices as insulating dielectric layers. In this work …
MOVPE growth of GaN via graphene layers on GaN/sapphire templates
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using
different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple …
different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple …
Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask
J Tao, Y Xu, J Li, X Cai, Y Wang, G Wang… - Japanese Journal of …, 2024 - iopscience.iop.org
The use of two-dimensional material like graphene to alleviate lattice mismatch has been an
effective way to realize high-quality GaN on heterogeneous substrates. The lack of hanging …
effective way to realize high-quality GaN on heterogeneous substrates. The lack of hanging …
Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered -plane sapphire substrates
H Lee, H Jo, JH Kim, J Ha, SY An, J Choi… - arXiv preprint arXiv …, 2023 - arxiv.org
The crystallographic orientation of 3D materials grown over 2D material-covered substrates
is one of the critical factors in discerning the true growth mechanism among competing …
is one of the critical factors in discerning the true growth mechanism among competing …