BACKGROUND In page-oriented memories, a page register is used as a temporary storage
structure to hold data being written to and read from a memory array. During a write …

BACKGROUND Non-volatile memories formed from carbon-based revers ible resistance-
switching elements are known. For example, US patent application Ser. No. 1 1/968,154 …

US PATENT DOCUMENTS described. To form this cell, a conductive or semiconductor pillar
is exposed at a dielectric Surface and recessed by selec tive etch. A thin, conformal layer of …

BACKGROUND One example of non-volatile memory uses variable resis tance memory
elements that may be set to either low or high resistance states, and can remain in that state …

SUMMARY OF THE INVENTION A memory array according to a particular embodiment of
the invention includes a Substrate, a plurality of first Select lines disposed in a plurality of …

A reversible fuse structure in an integrated circuit is obtained through the implementation of
a fuse cell having a short thin line of phase change materials in contact with via and line …

Provided are three-dimensional semiconductor devices and methods of fabricating and
operating the same. A device includes a connection node interposed between first and sec …

FIG. 6 is a right side elevation view thereof, FIG. 7 is a top plan view thereof; and, FIG. 8 is a
bottom plan view thereof. The broken lines immediately adjacent the shaded areas …

A middle electrode can be inserted at each intersection between a non-volatile memory
element layer located on an electrically conductive word line and a non-linear element …

6,643,159 B2 11/2003 Fricke et al. 2010, 0108982 A1 5/2010 Ping et al. 6,670.713 B2
12/2003 Gonzalez et al. 2010, 0163824 A1 7/2010 Xu et al. 6,744,088 B1 6/2004 Dennison …