A review on solar energy-based indirect water-splitting methods for hydrogen generation
M Gopinath, R Marimuthu - International Journal of Hydrogen Energy, 2022 - Elsevier
The distinguish generation methods regarding hydrogen generation using solar energy as a
triggering agent are discussed in this paper, specifically indirect techniques. Two broadly …
triggering agent are discussed in this paper, specifically indirect techniques. Two broadly …
Localized surface plasmon resonance in semiconductor nanocrystals
Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that
results in resonant absorption, scattering, and near field enhancement around the NC can …
results in resonant absorption, scattering, and near field enhancement around the NC can …
A strategy to apply machine learning to small datasets in materials science
There is growing interest in applying machine learning techniques in the research of
materials science. However, although it is recognized that materials datasets are typically …
materials science. However, although it is recognized that materials datasets are typically …
A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in
industrial, environmental and even biological fields. Compared to UV-enhanced Si …
industrial, environmental and even biological fields. Compared to UV-enhanced Si …
Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method
A Dolgonos, TO Mason, KR Poeppelmeier - Journal of solid state chemistry, 2016 - Elsevier
The direct optical band gap of semiconductors is traditionally measured by extrapolating the
linear region of the square of the absorption curve to the x-axis, and a variation of this …
linear region of the square of the absorption curve to the x-axis, and a variation of this …
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle, J Neugebauer - Journal of applied physics, 2004 - pubs.aip.org
First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …
experiments to powerful tools for predicting new materials and their properties. In the first …
Band parameters for nitrogen-containing semiconductors
I Vurgaftman, JR Meyer - Journal of applied physics, 2003 - pubs.aip.org
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Ru-InN Monolayer as a Gas Scavenger to Guard the Operation Status of SF6 Insulation Devices: A First-Principles Theory
H Cui, T Liu, Y Zhang, X Zhang - IEEE Sensors Journal, 2019 - ieeexplore.ieee.org
SF 6 insulation devices are important components in the power system, wherein the SF 6
acts as the insulating gas protecting the operation state of devices effectively. However, the …
acts as the insulating gas protecting the operation state of devices effectively. However, the …
Resolution of the band gap prediction problem for materials design
JM Crowley, J Tahir-Kheli… - The journal of physical …, 2016 - ACS Publications
An important property with any new material is the band gap. Standard density functional
theory methods grossly underestimate band gaps. This is known as the band gap problem …
theory methods grossly underestimate band gaps. This is known as the band gap problem …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …