A review on solar energy-based indirect water-splitting methods for hydrogen generation

M Gopinath, R Marimuthu - International Journal of Hydrogen Energy, 2022 - Elsevier
The distinguish generation methods regarding hydrogen generation using solar energy as a
triggering agent are discussed in this paper, specifically indirect techniques. Two broadly …

Localized surface plasmon resonance in semiconductor nanocrystals

A Agrawal, SH Cho, O Zandi, S Ghosh… - Chemical …, 2018 - ACS Publications
Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that
results in resonant absorption, scattering, and near field enhancement around the NC can …

A strategy to apply machine learning to small datasets in materials science

Y Zhang, C Ling - Npj Computational Materials, 2018 - nature.com
There is growing interest in applying machine learning techniques in the research of
materials science. However, although it is recognized that materials datasets are typically …

A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures

L Sang, M Liao, M Sumiya - Sensors, 2013 - mdpi.com
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in
industrial, environmental and even biological fields. Compared to UV-enhanced Si …

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

A Dolgonos, TO Mason, KR Poeppelmeier - Journal of solid state chemistry, 2016 - Elsevier
The direct optical band gap of semiconductors is traditionally measured by extrapolating the
linear region of the square of the absorption curve to the x-axis, and a variation of this …

First-principles calculations for defects and impurities: Applications to III-nitrides

CG Van de Walle, J Neugebauer - Journal of applied physics, 2004 - pubs.aip.org
First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

Band parameters for nitrogen-containing semiconductors

I Vurgaftman, JR Meyer - Journal of applied physics, 2003 - pubs.aip.org
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

Ru-InN Monolayer as a Gas Scavenger to Guard the Operation Status of SF6 Insulation Devices: A First-Principles Theory

H Cui, T Liu, Y Zhang, X Zhang - IEEE Sensors Journal, 2019 - ieeexplore.ieee.org
SF 6 insulation devices are important components in the power system, wherein the SF 6
acts as the insulating gas protecting the operation state of devices effectively. However, the …

Resolution of the band gap prediction problem for materials design

JM Crowley, J Tahir-Kheli… - The journal of physical …, 2016 - ACS Publications
An important property with any new material is the band gap. Standard density functional
theory methods grossly underestimate band gaps. This is known as the band gap problem …

When group-III nitrides go infrared: New properties and perspectives

J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …