Translinear circuits in subthreshold MOS
AG Andreou, KA Boahen - Analog Integrated Circuits and Signal …, 1996 - Springer
In this paper we provide an overview of translinear circuit design using MOS transistors
operating in subthreshold region. We contrast the bipolar and MOS subthreshold …
operating in subthreshold region. We contrast the bipolar and MOS subthreshold …
[图书][B] Low power and low voltage circuit design with the FGMOS transistor
E Rodriguez-Villegas - 2006 - books.google.com
Motivated by consumer demand for smaller, more portable electronic devices that offer more
features and operate for longer on their existing battery packs, cutting edge electronic …
features and operate for longer on their existing battery packs, cutting edge electronic …
A low-power wide-linear-range transconductance amplifier
R Sarpeshkar, RF Lyon, C Mead - Analog Integrated Circuits and Signal …, 1997 - Springer
The linear range of approximately±75mV of traditional subthreshold transconductance
amplifiers istoo small for certain applications—for example, for filtersin electronic cochleas …
amplifiers istoo small for certain applications—for example, for filtersin electronic cochleas …
Overview of floating-gate devices, circuits, and systems
P Hasler, TS Lande - … Transactions on Circuits and Systems II …, 2001 - ieeexplore.ieee.org
THIS Special Issue of the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II is focused
on circuits using floating-gate MOS transistors. These devices are well known from …
on circuits using floating-gate MOS transistors. These devices are well known from …
Weak inversion ISFETs for ultra-low power biochemical sensing and real-time analysis
L Shepherd, C Toumazou - Sensors and Actuators B: Chemical, 2005 - Elsevier
A novel pH sensor input stage is presented using the ISFET biased in the weak inversion
region so that current levels are of the order of nanoamps. Translinear current mode circuit …
region so that current levels are of the order of nanoamps. Translinear current mode circuit …
All-Optically Regulated ITO/Cu2O/WO3/ITO Memristor for Optoelectronic Neuromorphic Computing
F Wu, TY Tseng - ACS Applied Electronic Materials, 2024 - ACS Publications
Optoelectronic memristors are becoming increasingly attractive compared to traditional
electrical memristors because they can effectively integrate the benefits of both photonics …
electrical memristors because they can effectively integrate the benefits of both photonics …
A general translinear principle for subthreshold MOS transistors
T Serrano-Gotarredona… - IEEE transactions on …, 1999 - ieeexplore.ieee.org
This paper revises the conditions under which the translinear principle can be fully exploited
for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold …
for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold …
An autozeroing floating-gate amplifier
P Hasler, BA Minch, C Diorio - IEEE Transactions on Circuits …, 2001 - ieeexplore.ieee.org
We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-
electron injection to set its dc operating point adaptively. Because the hot-electron injection …
electron injection to set its dc operating point adaptively. Because the hot-electron injection …
Adaptive circuits using pFET floating-gate devices
P Hasler, BA Minch, C Diorio - Proceedings 20th Anniversary …, 1999 - ieeexplore.ieee.org
In this paper, we describe our floating-gate pFET device, with its many circuit applications
and supporting experimental measurements. We developed these devices in standard …
and supporting experimental measurements. We developed these devices in standard …
Ultra low-voltage/low-power digital floating-gate circuits
This paper describes a novel technique for implementing ultra low-voltage/low-power digital
circuits. The effective threshold voltage seen from a control gate is adjusted during a UV …
circuits. The effective threshold voltage seen from a control gate is adjusted during a UV …